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PolarHV TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXFN 64N60P
V DSS
I D25
R DS(on)
t rr
=
=
≤
≤
600 V
50 A
96 m ?
200 ns
Fast Intrinsic Diode
miniBLOC, SOT-227 B (IXFN)
E153432
S
Symbol
Test Conditions
Maximum Ratings
G
V DSS
T J = 25°C to 150°C
600
V
V DGR
V GSS
T J = 25°C to 150°C; R GS = 1 M ?
Continuous
600
± 30
V
V
D
S
V GSM
I D25
Transient
T C = 25°C
± 40
50
V
A
G = Gate
S = Source
D = Drain
I DM
I AR
E AR
E AS
T C = 25°C, pulse width limited by T JM
T C = 25°C
T C = 25°C
T C = 25°C
150
64
80
3.5
A
A
mJ
J
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
dv/dt
P D
T J
T JM
T stg
T L
V ISOL
M d
I S ≤ I DM , di/dt ￡ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150°C, R G = 2 ?
T C = 25°C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, 1 minute
Mounting torque
Terminal torque
20 V/ns
700 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
300 °C
2500 V~
1.13/10 Nm/lb.in.
1.13/10 Nm/lb.in.
Features
? International standard package
? Encapsulating epoxy meets
UL 94 V-0, flammability classification
? miniBLOC with Aluminium nitride
isolation
? Low R DS (on) HDMOS TM process
? Rugged polysilicon gate cell structure
? Unclamped Inductive Switching (UIS)
rated
? Low package inductance
? Fast intrinsic Rectifier
Weight
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
30 g
Characteristic Values
Min. Typ. Max.
Applications
? DC-DC converters
? Synchronous rectification
? Battery chargers
? Switched-mode and resonant-mode
power supplies
BV DSS
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 3 mA
V DS = V GS , I D = 8 mA
V GS = ± 30 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
T J = 125 ° C
600
3.0
5.0
± 200
25
1000
V
V
nA
μ A
μ A
? DC choppers
? Temperature and lighting controls
? Low voltage relays
Advantages
? Easy to mount
? Space savings
? High power density
R DS(on)
V GS = 10 V, I D = 0.5 I D25 , Note 1
96
m ?
? 2006 IXYS All rights reserved
DS99443E(01/06)
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